 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Thyristor Modules Thyristor/Diode Modules Preliminary Data Sheet PSKT 250 PSKH 250 ITRMS ITAVM VRRM = 2x 450 A = 2x 287 A = 800-1800 V 3 2 1 7 6 VRSM VDSM V 900 1300 1500 1700 1900 VRRM VDRM V 800 1200 1400 1600 1800 Type Version 1 PSKT 250/08io1 PSKT 250/12io1 PSKT 250/14io1 PSKT 250/16io1 PSKT 250/18io1 Version 1 PSKH 250/08io1 PSKH 250/12io1 PSKH 250/14io1 PSKH 250/16io1 PSKH 250/18io1 5 4 3 671 542 Symbol ITRMS, IFRMS ITAVM, IFAVM ITSM, IFSM Test Conditions TVJ = TVJM TC = 85C; 180 sine TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 450 287 9000 9600 7800 8500 405 000 380 000 304 000 300 000 100 800 1000 120 60 20 10 -40...+140 140 -40...+125 A A A A A A A 2s A 2s A2 s A2 s A/s PSKT 3 1 5 42 PSKH i2dt TVJ = 45C VR = 0 TVJ = TVJM VR = 0 Features (di/dt)cr TVJ = TVJM repetitive, IT = 860 A f =50 Hz, tP =200 s VD = 2/3 VDRM IG = 1 A non repetitive, IT = 290 A diG/dt = 1 A/s TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tP = 30 s tP = 500 s A/s V/s International standard package Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 148688 Keyed gate/cathode twin pins (dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight Applications W W W V C C C V~ V~ Motor control Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Contactless switches 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s 3000 3600 Advantages Mounting torque (M5) Terminal connection torque (M8) Typical including screws 2.5-5/22-44 Nm/lb.in. 12-15/106-132 Nm/lb.in. 320 g Space and weight savings Simple mounting with two screws Improved temperature and power cycling capability Reduced protection circuits Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Symbol IRRM IDRM VT, VF VT0 rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dS dA a Test Conditions TVJ = TVJM; VR = VRRM; VD = VDRM IT, IF = 600 A; TVJ = 25C For power-loss calculations only (TVJ = 140C) VD = 6 V; VD = 6 V; TVJ = TVJM; TVJ = 25C TVJ = -40C TVJ = 25C TVJ = -40C VD = 2/3 VDRM Characteristic Values 70 40 1.36 0.85 0.82 2 3 150 200 0.25 10 200 150 2 200 760 275 0.129 0.0645 0.169 0.0845 12.7 9.6 50 mA mA V V m V V mA mA V mA mA mA s s C A K/W K/W K/W K/W mm mm m/s2 Fig. 1 Gate trigger characteristics TVJ = 25C; tP = 30 s; VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/s TVJ = 25C; VD = 6 V; RGK = TVJ = 25C; VD = 1/2 VDRM IG = 1 A; diG/dt = 1 A/s TVJ = TVJM; IT = 300 A, tP = 200 s; -di/dt = 10 A/s typ. VR = 100 V; dv/dt = 50 V/s; VD = 2/3 VDRM TVJ = 125C; IT, IF = 400 A, -di/dt = 50 A/s per per per per thyristor/diode; DC current module thyristor/diode; DC current module other values see Fig. 8/9 Creepage distance on surface Strike distance through air Maximum allowable acceleration Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Fig. 2 Gate trigger delay time Dimensions in mm (1 mm = 0.0394") PSKT PSKH Threaded spacer for higher Anode/ Cathode construction: Type ZY 250, material brass 20 12 14 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 4 i2dt versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode) Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 3xPSKT 250 or 3xPSKH 250 POWERSEM GmbH, Walpersdorfer Str. 53 2002 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 3xPSKT 250 or 3xPSKH 250 0.15 K/W 30 DC Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) RthJC for various conduction angles d: ZthJC 0.10 d DC 180C 120C 60C 30C RthJC (K/W) 0.129 0.131 0.131 0.132 0.132 0.05 Constants for ZthJC calculation: i 0.00 10-3 10-2 10-1 100 101 s 102 Rthi (K/W) 0.0035 0.0165 0.1091 ti (s) 0.099 0.168 0.456 t 1 2 3 0.20 K/W 30 DC 0.15 ZthJK Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) RthJK for various conduction angles d: d RthJK (K/W) 0.169 0.171 0.172 0.172 0.173 DC 180C 120C 60C 30C 0.10 0.05 Constants for ZthJK calculation: i 0.00 10-3 10-2 10-1 100 101 s 102 Rthi (K/W) 0.0033 0.0159 0.1053 0.04 ti (s) 0.099 0.168 0.456 1.36 t 1 2 3 4 POWERSEM GmbH, Walpersdorfer Str. 53 2002 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 |
Price & Availability of PSKH250
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |